Gallium Nitride (GaN) Epitaxial Layer Manufacturing in 2025: Unleashing Next-Gen Power and RF Solutions. Explore Market Dynamics, Technological Breakthroughs, and Strategic Forecasts Shaping the Industry’s Future.

• Executive Summary: Key Insights and 2025 Highlights
• Market Size and Growth Forecast (2025–2030): CAGR and Revenue Projections
• Technology Landscape: Advances in GaN Epitaxial Layer Manufacturing
• Key Players and Competitive Analysis (e.g., nexgenpower.com, onsemi.com, infineon.com)
• Application Trends: Power Electronics, RF Devices, and Emerging Uses
• Supply Chain and Raw Material Dynamics
• Regional Analysis: Asia-Pacific, North America, Europe, and Rest of World
• Investment, M&A, and Strategic Partnerships
• Challenges, Risks, and Regulatory Environment (Referencing ieee.org, semiconductors.org)
• Future Outlook: Innovation Roadmap and Market Opportunities Through 2030
• Sources & References

Executive Summary: Key Insights and 2025 Highlights

Gallium Nitride (GaN) epitaxial layer manufacturing is entering a pivotal phase in 2025, driven by surging demand for high-performance power electronics, radio frequency (RF) devices, and next-generation optoelectronics. The sector is characterized by rapid capacity expansions, technological innovation, and strategic investments from leading global players. GaN’s superior material properties—such as wide bandgap, high electron mobility, and thermal stability—are enabling significant advances in energy efficiency and device miniaturization, positioning GaN epitaxy as a cornerstone of the semiconductor industry’s evolution.

In 2025, the industry is witnessing a marked shift toward larger wafer diameters, with 6-inch and 8-inch GaN-on-silicon (GaN-on-Si) epitaxial wafers gaining traction. This transition is spearheaded by major manufacturers such as ams OSRAM, imec, and NXP Semiconductors, who are scaling up production to meet the needs of automotive, consumer, and industrial markets. The adoption of metal-organic chemical vapor deposition (MOCVD) as the dominant epitaxial growth technique continues, with equipment suppliers like Veeco Instruments and AIXTRON delivering new-generation reactors optimized for high uniformity and throughput.

Strategic investments and partnerships are shaping the competitive landscape. For example, STMicroelectronics is ramping up its GaN epitaxy capabilities in Europe, targeting automotive and industrial power applications. Similarly, Infineon Technologies is expanding its GaN-on-Si production lines, aiming to secure a leading position in power conversion and RF markets. In Asia, Epistar and Sanan Optoelectronics are increasing their epitaxial wafer output, leveraging advanced MOCVD platforms and vertical integration to serve both domestic and international customers.

Key challenges in 2025 include further reducing defect densities, improving wafer uniformity, and lowering production costs to enable broader adoption in cost-sensitive sectors. Industry consortia and research institutes, such as CSEM and imec, are collaborating with manufacturers to accelerate process optimization and standardization.

Looking ahead, the outlook for GaN epitaxial layer manufacturing remains robust. The convergence of electric vehicles, 5G infrastructure, and renewable energy systems is expected to drive double-digit growth in wafer demand over the next several years. As manufacturers continue to scale up and refine their processes, GaN epitaxy is set to play a central role in the global transition toward more efficient, compact, and sustainable electronic systems.

Market Size and Growth Forecast (2025–2030): CAGR and Revenue Projections

The Gallium Nitride (GaN) epitaxial layer manufacturing sector is poised for robust expansion between 2025 and 2030, driven by surging demand in power electronics, radio frequency (RF) devices, and optoelectronics. As of 2025, the market is characterized by significant investments in capacity expansion and technological innovation, with leading manufacturers scaling up to meet the requirements of electric vehicles, 5G infrastructure, and energy-efficient power conversion systems.

Key industry players such as ams OSRAM, Wolfspeed, Kyocera, ROHM, and Nichia Corporation are actively expanding their GaN epitaxy production lines. For instance, Wolfspeed has recently inaugurated new facilities dedicated to 200mm GaN-on-SiC and GaN-on-Si wafer production, aiming to address the growing needs of automotive and industrial power markets. Similarly, ams OSRAM continues to invest in GaN-based optoelectronic device manufacturing, targeting both visible and ultraviolet applications.

Revenue projections for the GaN epitaxial layer market indicate a compound annual growth rate (CAGR) in the range of 20–25% from 2025 to 2030, with global market revenues expected to surpass several billion USD by the end of the decade. This growth is underpinned by the rapid adoption of GaN power devices in electric vehicles, renewable energy inverters, and data center power supplies, as well as the proliferation of GaN RF components in 5G base stations and satellite communications. The transition from 150mm to 200mm wafer platforms, as pursued by Wolfspeed and Kyocera, is anticipated to further accelerate cost reductions and yield improvements, making GaN technology more accessible for mass-market applications.

In Asia, companies such as Nichia Corporation and ROHM are expanding their epitaxial wafer output to serve the fast-growing consumer electronics and automotive sectors. Meanwhile, European and North American manufacturers are focusing on high-reliability and high-performance GaN epitaxial layers for industrial and defense applications.

Looking ahead, the GaN epitaxial layer manufacturing market is expected to maintain double-digit growth rates through 2030, supported by ongoing investments in wafer size scaling, process automation, and vertical integration by leading suppliers. The competitive landscape will likely intensify as new entrants and established semiconductor companies ramp up their GaN capabilities to capture a share of this rapidly expanding market.

Technology Landscape: Advances in GaN Epitaxial Layer Manufacturing

The technology landscape for Gallium Nitride (GaN) epitaxial layer manufacturing in 2025 is characterized by rapid innovation, driven by the surging demand for high-performance power electronics, RF devices, and optoelectronics. GaN’s superior material properties—such as wide bandgap, high electron mobility, and thermal stability—have made it a preferred choice over traditional silicon, especially in applications requiring high efficiency and power density.

A central focus in 2025 is the continued evolution of Metal-Organic Chemical Vapor Deposition (MOCVD) as the dominant technique for GaN epitaxy. Leading equipment suppliers, such as AIXTRON SE and Veeco Instruments Inc., have introduced new MOCVD platforms with enhanced automation, improved uniformity, and higher throughput. These advancements are critical for scaling up production and reducing costs, particularly as the industry shifts toward larger wafer diameters—moving from 4-inch and 6-inch to 8-inch substrates. The transition to 8-inch GaN-on-silicon epitaxy is being actively pursued by major foundries and IDMs, including Infineon Technologies AG and STMicroelectronics, aiming to leverage existing silicon infrastructure for mass-market applications.

Substrate innovation is another key trend. While sapphire and silicon carbide (SiC) remain prevalent, the push for cost-effective, high-quality GaN-on-silicon epitaxy is intensifying. Companies like Nitride Semiconductors Co., Ltd. and Kyocera Corporation are investing in advanced buffer layer engineering and strain management techniques to minimize defects and improve yield. Meanwhile, SiC substrates, championed by suppliers such as Wolfspeed, Inc., continue to gain traction for high-power and high-frequency applications due to their superior thermal conductivity and lattice match with GaN.

In parallel, the adoption of in-situ monitoring and advanced metrology is becoming standard practice. Real-time process control, enabled by optical and X-ray-based tools, is helping manufacturers achieve tighter tolerances and higher reproducibility. This is particularly important for automotive and telecom sectors, where device reliability is paramount.

Looking ahead, the next few years are expected to see further integration of artificial intelligence and machine learning in process optimization, as well as the emergence of novel epitaxial techniques such as Hydride Vapor Phase Epitaxy (HVPE) for bulk GaN substrates. Strategic collaborations between equipment makers, material suppliers, and device manufacturers—such as those between AIXTRON SE and leading foundries—are likely to accelerate the commercialization of next-generation GaN devices, solidifying GaN’s role in the global semiconductor ecosystem.

Key Players and Competitive Analysis (e.g., nexgenpower.com, onsemi.com, infineon.com)

The competitive landscape of Gallium Nitride (GaN) epitaxial layer manufacturing in 2025 is characterized by rapid technological advancements, capacity expansions, and strategic partnerships among leading semiconductor companies. GaN epitaxial layers are foundational for high-performance power devices, RF components, and optoelectronics, driving intense competition among established players and new entrants.

Among the most prominent companies, NexGen Power Systems stands out for its vertically integrated approach, encompassing GaN epitaxy, device fabrication, and system-level solutions. NexGen leverages proprietary GaN-on-GaN technology, which enables higher breakdown voltages and improved thermal performance compared to conventional GaN-on-silicon or GaN-on-silicon carbide substrates. The company has announced plans to scale up its epitaxial wafer production to meet growing demand in data centers, electric vehicles, and renewable energy applications.

onsemi is another key player, focusing on GaN epitaxial wafer development for power conversion and automotive markets. onsemi has invested in expanding its GaN manufacturing capabilities, including the integration of advanced metal-organic chemical vapor deposition (MOCVD) reactors and in-house substrate processing. The company’s GaN solutions are increasingly adopted in fast-charging, industrial automation, and energy infrastructure, reflecting a broader industry shift toward high-efficiency power electronics.

Infineon Technologies maintains a strong position in the GaN epitaxy sector, leveraging its expertise in wide bandgap semiconductors. Infineon’s GaN-on-silicon technology is central to its product roadmap, with ongoing investments in 200mm wafer production lines to achieve economies of scale. The company collaborates with equipment suppliers and research institutes to optimize epitaxial growth processes, targeting applications in consumer electronics, telecom, and automotive powertrains.

Other notable participants include STMicroelectronics, which is ramping up GaN epitaxial wafer output through partnerships and internal R&D, and ROHM Semiconductor, which focuses on GaN-on-silicon carbide (SiC) epitaxy for high-power and high-frequency devices. Wolfspeed (formerly Cree) is also expanding its GaN epitaxial capabilities, particularly for RF and 5G infrastructure.

Looking ahead, the competitive dynamics in GaN epitaxial layer manufacturing are expected to intensify as companies race to improve wafer quality, reduce defect densities, and lower production costs. Strategic investments in larger wafer diameters, advanced MOCVD tools, and supply chain integration will be critical differentiators. The next few years will likely see further consolidation, technology licensing, and cross-industry collaborations as demand for GaN-based devices accelerates across multiple sectors.

Application Trends: Power Electronics, RF Devices, and Emerging Uses

Gallium Nitride (GaN) epitaxial layer manufacturing is at the forefront of innovation in power electronics, RF (radio frequency) devices, and a growing array of emerging applications. As of 2025, the industry is witnessing rapid expansion, driven by the superior material properties of GaN—such as high electron mobility, wide bandgap, and thermal stability—which enable devices with higher efficiency, faster switching speeds, and greater power density compared to traditional silicon-based technologies.

In power electronics, GaN epitaxial layers are foundational for the production of high-performance transistors and diodes used in electric vehicles (EVs), renewable energy inverters, and fast-charging infrastructure. Leading manufacturers like Infineon Technologies AG and STMicroelectronics have expanded their GaN device portfolios, leveraging advanced epitaxial growth techniques such as metal-organic chemical vapor deposition (MOCVD) to achieve high-quality, defect-free layers on both silicon and silicon carbide substrates. These advancements are enabling the mass production of 650V and 1200V GaN power devices, which are increasingly adopted in automotive and industrial sectors.

In the RF domain, GaN epitaxial layers are critical for fabricating high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) used in 5G base stations, satellite communications, and radar systems. Companies such as Qorvo, Inc. and Cree, Inc. (now operating as Wolfspeed) are scaling up their GaN-on-SiC and GaN-on-Si epitaxial wafer production to meet the surging demand for high-frequency, high-power RF components. The ongoing transition to 6G and advanced defense applications is expected to further accelerate the adoption of GaN epitaxial technologies in the coming years.

Emerging uses for GaN epitaxial layers are also gaining momentum. In micro-LED displays, GaN’s direct bandgap and high luminous efficiency are enabling next-generation screens with superior brightness and energy efficiency. Companies like ams OSRAM are investing in GaN epitaxy for both display and solid-state lighting applications. Additionally, GaN-based sensors and photonic devices are being explored for use in quantum computing, LiDAR, and biomedical instrumentation.

Looking ahead, the GaN epitaxial layer manufacturing sector is poised for continued growth through 2025 and beyond, as industry leaders invest in larger wafer diameters (up to 200mm), improved process control, and vertical integration. Strategic partnerships and capacity expansions by companies such as Ferrotec Holdings Corporation and Kyocera Corporation are expected to further strengthen the global supply chain, supporting the proliferation of GaN-based solutions across diverse high-growth markets.

Supply Chain and Raw Material Dynamics

The supply chain and raw material dynamics for Gallium Nitride (GaN) epitaxial layer manufacturing are undergoing significant transformation as demand for GaN-based devices accelerates in 2025 and beyond. GaN epitaxial layers, essential for high-performance power electronics and RF applications, rely on a complex global network of raw material suppliers, substrate manufacturers, and epitaxy specialists.

A critical raw material for GaN epitaxy is high-purity gallium, which is primarily sourced as a byproduct of aluminum and zinc production. The global gallium supply remains concentrated, with major producers in China, Germany, and Japan. In 2024, China accounted for over 90% of primary gallium production, raising concerns about supply security and price volatility. Efforts to diversify supply are ongoing, with companies in Europe and North America exploring secondary recovery and recycling initiatives to reduce dependence on primary sources.

Substrate availability is another key factor. While sapphire has historically been the dominant substrate for GaN epitaxy, silicon carbide (SiC) and silicon (Si) substrates are gaining traction due to their superior thermal and lattice-matching properties. Leading substrate suppliers such as Kyocera Corporation and Sumitomo Chemical are expanding their SiC wafer production capacity to meet the growing needs of the GaN device market. Additionally, onsemi and Wolfspeed are vertically integrating their supply chains by investing in both SiC substrate manufacturing and GaN epitaxy, aiming to secure material availability and control costs.

The epitaxial growth process itself, typically performed using metal-organic chemical vapor deposition (MOCVD), requires specialized equipment and precursor chemicals. Equipment suppliers such as AIXTRON SE and Veeco Instruments Inc. are reporting strong order books for MOCVD reactors, reflecting robust investment in new and expanded GaN epitaxy lines worldwide. These companies are also innovating to improve throughput and yield, which is critical as device manufacturers seek to scale production.

Looking ahead to the next few years, the GaN epitaxial supply chain is expected to become more resilient and geographically diversified. Strategic partnerships and long-term supply agreements are being established between device manufacturers and raw material suppliers to mitigate risks associated with geopolitical tensions and raw material shortages. Furthermore, recycling of gallium from end-of-life electronics and process scrap is anticipated to play a larger role, supported by initiatives from companies like Umicore.

In summary, while the GaN epitaxial layer manufacturing supply chain faces challenges related to raw material concentration and substrate availability, ongoing investments, technological advancements, and supply chain integration are positioning the industry for robust growth and greater stability through 2025 and beyond.

Regional Analysis: Asia-Pacific, North America, Europe, and Rest of World

The global landscape for Gallium Nitride (GaN) epitaxial layer manufacturing in 2025 is characterized by strong regional specialization, with Asia-Pacific, North America, and Europe each playing distinct roles in the supply chain and technology development. The Asia-Pacific region, led by countries such as China, Japan, South Korea, and Taiwan, continues to dominate both in terms of manufacturing capacity and technological advancement. Major players like San’an Optoelectronics (China), OSRAM (with significant operations in Malaysia), and Epistar (Taiwan) are expanding their GaN epitaxy lines to meet surging demand for power electronics, RF devices, and microLED displays. China, in particular, is investing heavily in domestic GaN supply chains, with government-backed initiatives supporting both substrate and epitaxial wafer production.

Japan remains a key innovator, with companies such as Nichia Corporation and Sumitomo Chemical focusing on high-quality GaN epitaxial wafers for optoelectronic and power device applications. South Korea’s Samsung and LG are also investing in GaN epitaxy for next-generation consumer electronics and automotive applications. Taiwan’s Epistar and Wafer Works are scaling up production, leveraging the region’s established semiconductor ecosystem.

In North America, the United States is home to several leading GaN epitaxial wafer manufacturers and technology developers. Wolfspeed (formerly Cree) operates one of the world’s largest vertically integrated GaN and SiC facilities, with ongoing expansion of its Mohawk Valley Fab to address growing demand in automotive and industrial power markets. IQE (with U.S. and UK operations) supplies GaN epitaxial wafers for RF and photonics, while onsemi and MACOM are investing in GaN-on-Si and GaN-on-SiC technologies for high-frequency and high-power applications.

Europe’s GaN epitaxy sector is anchored by companies such as OSRAM (Germany), Soitec (France), and ams OSRAM, focusing on automotive, industrial, and lighting markets. The region benefits from strong R&D networks and EU-backed initiatives to localize advanced semiconductor manufacturing. Collaborative projects between industry and research institutes are accelerating the development of 200mm GaN-on-Si epitaxy, aiming to enhance competitiveness and supply chain resilience.

In the Rest of World, emerging players in Southeast Asia and the Middle East are beginning to invest in GaN epitaxial manufacturing, often in partnership with established technology providers. However, these regions remain in the early stages of ecosystem development compared to the established hubs in Asia-Pacific, North America, and Europe.

Looking ahead to the next few years, regional competition is expected to intensify as governments and industry leaders prioritize supply chain security and technological sovereignty. Capacity expansions, technology transfers, and cross-border collaborations will shape the evolving global GaN epitaxy landscape, with Asia-Pacific likely to retain its leadership, while North America and Europe focus on high-value, strategic applications and advanced manufacturing nodes.

Investment, M&A, and Strategic Partnerships

The landscape of investment, mergers and acquisitions (M&A), and strategic partnerships in Gallium Nitride (GaN) epitaxial layer manufacturing is rapidly evolving as the demand for high-performance power and RF devices accelerates. In 2025 and the coming years, the sector is witnessing intensified activity from both established semiconductor giants and emerging players, driven by the need to secure supply chains, expand production capacity, and accelerate innovation.

Major industry leaders such as Infineon Technologies AG, STMicroelectronics, and NXP Semiconductors have continued to invest heavily in GaN epitaxy capabilities, either through direct capital expenditure or by forming alliances with specialized epitaxial wafer suppliers. For instance, Infineon Technologies AG has expanded its GaN-on-Si production lines and entered into long-term supply agreements with key substrate and epitaxy partners to ensure a stable pipeline for automotive and industrial applications.

Strategic partnerships are also shaping the competitive landscape. STMicroelectronics has deepened its collaboration with leading GaN epitaxy providers to accelerate the commercialization of GaN-based power devices, while NXP Semiconductors has announced joint development programs with foundries and material suppliers to optimize GaN-on-SiC and GaN-on-Si epitaxial processes for RF and 5G infrastructure markets.

On the M&A front, the sector has seen a wave of consolidation as companies seek to vertically integrate and secure critical know-how. Notably, Renesas Electronics Corporation acquired a majority stake in a GaN epitaxy specialist to bolster its power device portfolio, while onsemi has pursued targeted acquisitions to enhance its GaN wafer and epitaxial technology base. These moves are aimed at reducing reliance on external suppliers and capturing more value across the supply chain.

Emerging players such as Navitas Semiconductor and Efficient Power Conversion Corporation are also attracting significant venture capital and strategic investment, particularly from automotive and consumer electronics OEMs eager to secure next-generation GaN solutions. These investments are often accompanied by joint development agreements and technology licensing deals, further accelerating the pace of innovation in epitaxial layer manufacturing.

Looking ahead, the outlook for investment and strategic activity in GaN epitaxial layer manufacturing remains robust. As the market for electric vehicles, renewable energy, and high-frequency communications continues to expand, industry participants are expected to deepen collaborations, pursue further M&A, and invest in advanced epitaxial growth technologies to meet surging demand and maintain technological leadership.

Challenges, Risks, and Regulatory Environment (Referencing ieee.org, semiconductors.org)

Gallium Nitride (GaN) epitaxial layer manufacturing faces a complex landscape of challenges, risks, and regulatory considerations as the industry advances into 2025 and beyond. One of the primary technical challenges remains the production of high-quality, defect-free GaN layers at scale. The heteroepitaxial growth of GaN on substrates such as silicon, sapphire, or silicon carbide often introduces dislocations and other crystalline defects, which can degrade device performance and yield. Despite significant progress in metal-organic chemical vapor deposition (MOCVD) and hydride vapor phase epitaxy (HVPE) techniques, maintaining uniformity and reproducibility across large wafer diameters continues to be a critical hurdle for manufacturers.

Supply chain risks are also prominent. The availability and cost of high-purity precursor materials, such as trimethylgallium and ammonia, are subject to fluctuations, and the global supply of suitable substrates is limited. Geopolitical tensions and export controls, particularly concerning advanced semiconductor materials and equipment, add further uncertainty to the supply chain. The Semiconductor Industry Association has highlighted the importance of resilient supply chains and the potential impact of trade restrictions on the growth of compound semiconductor sectors, including GaN.

From a regulatory perspective, environmental and safety standards are tightening. The use of hazardous chemicals in epitaxial growth processes, such as arsine and ammonia, is subject to strict regulation in major manufacturing regions. Compliance with evolving environmental, health, and safety (EHS) requirements—such as those set by the European Union’s REACH regulation and the U.S. Environmental Protection Agency—demands ongoing investment in abatement technologies and process optimization. Additionally, as GaN devices become more prevalent in power electronics and RF applications, there is increased scrutiny regarding device reliability and long-term performance, prompting calls for standardized testing and qualification protocols. The IEEE is actively involved in developing standards and best practices for wide bandgap semiconductor devices, including GaN, to ensure interoperability and safety across the industry.

Looking ahead, the regulatory environment is expected to become more stringent, particularly regarding sustainability and the responsible sourcing of raw materials. Manufacturers will need to invest in greener processes and transparent supply chains to meet both regulatory requirements and customer expectations. At the same time, ongoing collaboration between industry bodies, such as Semiconductor Industry Association and IEEE, and leading manufacturers will be crucial in addressing technical and regulatory challenges, supporting the continued growth and adoption of GaN epitaxial technologies through 2025 and the following years.

Future Outlook: Innovation Roadmap and Market Opportunities Through 2030

The future of Gallium Nitride (GaN) epitaxial layer manufacturing is poised for significant transformation and expansion through 2030, driven by rapid innovation, scaling of production, and the emergence of new market opportunities. As of 2025, the industry is witnessing a shift from research-scale to high-volume manufacturing, with leading players investing in advanced epitaxial growth techniques and larger wafer formats to meet surging demand in power electronics, RF devices, and optoelectronics.

Key manufacturers such as ams OSRAM, Nichia Corporation, and Cree | Wolfspeed are scaling up their metal-organic chemical vapor deposition (MOCVD) and hydride vapor phase epitaxy (HVPE) capabilities. These companies are focusing on 6-inch and 8-inch GaN-on-silicon and GaN-on-SiC wafers, which are critical for cost reduction and integration with existing semiconductor fabrication lines. For instance, Cree | Wolfspeed has announced substantial investments in expanding its Mohawk Valley Fab, targeting high-volume 200mm GaN wafer production to support next-generation power and RF applications.

Innovation in epitaxial growth is also being accelerated by collaborations between material suppliers and equipment manufacturers. ams OSRAM and Nichia Corporation are both advancing proprietary MOCVD reactor designs and in-situ monitoring technologies to improve layer uniformity, reduce defect densities, and enable higher device yields. These improvements are essential for the adoption of GaN in electric vehicles, 5G infrastructure, and renewable energy systems, where performance and reliability are paramount.

Looking ahead, the roadmap for GaN epitaxial layer manufacturing includes the development of native GaN substrates, which promise further reductions in dislocation densities and enhanced device performance. Companies such as Soraa and Ammono are pioneering bulk GaN crystal growth, aiming to commercialize high-quality native substrates by the late 2020s. This shift could unlock new device architectures and enable ultra-high-voltage and high-frequency applications.

Market opportunities are expected to expand rapidly, with GaN epitaxial layers playing a central role in the electrification of transportation, grid modernization, and the proliferation of high-efficiency data centers. Strategic partnerships, vertical integration, and continued investment in R&D will be critical for manufacturers to capture value in this evolving landscape. By 2030, GaN epitaxial technology is anticipated to be a cornerstone of the global semiconductor ecosystem, underpinning advances in energy efficiency and high-speed communications.

Sources & References

• ams OSRAM
• imec
• NXP Semiconductors
• Veeco Instruments
• AIXTRON
• STMicroelectronics
• Infineon Technologies
• Epistar
• CSEM
• Wolfspeed
• Kyocera
• ROHM
• Nichia Corporation
• AIXTRON SE
• NexGen Power Systems
• Cree, Inc.
• Ferrotec Holdings Corporation
• Sumitomo Chemical
• Umicore
• OSRAM
• Nichia Corporation
• LG
• Wafer Works
• IQE
• Soitec
• Semiconductor Industry Association
• IEEE
• Soraa